Our company is speclizied in making GaAs Single Crystal Ingot and our annual volume is 400000mm per year. We have successfully created the 4"-6" GaAs ingot on the base of the 2" item. We have overcomed the technical diffculty on the VGF, the thermal field and the growth technology for stable, batches manufaction with high rate of final products, the leakless structure technology on the 9. 6mpa high-perssure airprrof furnace. We also have started the research on the manufaction and conbination of the low-resistance GaAs single crystal material. We even suggested to create the low potential, complexed density GaAs material in the 3T-HGF method mixing with the usual GaAs material.
